Coulomb blockade in a nanoscale phosphorus-in-silicon island

The Analysis of Coulomb Blockade in Fullerene Single Electron Transistor at Room Temperature

The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such...

Coulomb blockade in vertical, bandgap engineered silicon nanopillars

Nanoscale modification of silicon surfaces via Coulomb explosion

Coulomb explosions on silicon surfaces are studied using large-scale molecular-dynamics simulations. Processes under investigation begin by embedding a region consisting of 265–365 singly charged Si ions on a Si @111# surface. The repulsive electrostatic energy, initially stored in the charged region, leads to a local state with ultrahigh pressure and stress. During the relaxation process, part...

Coulomb blockade in Quantum Dots

In the resonant tunnelling diode we have treated electrons as non interacting particles. We have discussed their wave nature, which led to quantized energy states in small and coherent cavities. Qualitatively this is due to the requirement that an integer number of Fermi wavelengths has to fit between the barriers. Here we begin in the opposite limit by neglecting space quantization effects in ...

Quantum Effects in Coulomb Blockade

We review the quantum interference effects in a system of interacting electrons confined to a quantum dot. The review starts with a description of an isolated quantum dot. We discuss the Random Matrix theory (RMT) of the one-electron states in the dot, present the universal form of the interaction Hamiltonian compatible with the RMT, and derive the leading corrections to the universal interacti...